Low-cost Micrometer-scale Silicon Vias (SVs) Fabrication by Metal-assisted Chemical Etching (MaCE) and Carbon Nanotubes (CNTs) Filling

摘要

A low cost etching method, metal-assisted chemical etching (MaCE), was used to successfully etching 30 μm-diameter silicon vias (SVs), of which the quality are comparable to those fabricated by deep reactive ion etching (DRIE) method. A novel carbon nanomaterial filling method was developed based on chemical vapor deposition (CVD) technique. The influence of preparation- of CVD catalyst on the quality of filling materials was compared and discussed.