首页> 外文会议>IEEE Electronic Components and Technology Conference >Chiplets in Wafers (CiW) - Process Design Kit and Demonstration of High-Frequency Circuits with GaN Chiplets in Silicon Interposers
【24h】

Chiplets in Wafers (CiW) - Process Design Kit and Demonstration of High-Frequency Circuits with GaN Chiplets in Silicon Interposers

机译:晶圆中的小芯片(CIW) - 工艺设计套件和硅插入器中的GaN小芯片的高频电路演示

获取原文

摘要

The Metal Embedded Chiplet Assembly for Microwave Integrated Circuits (MECAMIC) technology utilizes RF GaN transistor chiplets integrated into passive interposer wafers using a metal electroplating embedding approach. Chiplets in Wafers (CiW) enable high level of integration between the transistor chiplets and the packaging circuitry, resulting in high RF performance. In this paper, we present the detailed process flow, the development of a MECAMIC Process Design Kit (PDK) for mm-wave RF Integrated Circuits (ICs), and its application to the design, simulation, fabrication and measurements of heterogeneously-integrated multi-stage W-band Low Noise Amplifiers (LNAs) using state-of-the-art mm-wave GaN transistor chiplets and low-cost silicon interposer packaging with 16 dB gain and 4dB noise figure at 77 GHz.
机译:用于微波集成电路(MECAMIC)技术的金属嵌入式小芯片组件利用RF GaN晶体管尖芯,使用金属电镀嵌入方法集成到无源插入晶片中。 在晶片中的小芯片(CIW)使得能够在晶体管小芯片和包装电路之间进行高度的集成度,从而产生高的RF性能。 在本文中,我们介绍了MM-WAVE RF集成电路(IC)的MECAMIC Process Design Kit(PDK)的详细过程流程,其应用于异构地集成多的设计,仿真,制造和测量 - 使用最先进的MM波GaN晶体管夹头和低成本硅插入器包装,具有16 dB增益和4dB噪声系数的低成本硅插入器,77 GHz。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号