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Signal generation and processing in high-frequency/high-speed silicon-based integrated circuits.

机译:高频/高速硅基集成电路中的信号生成和处理。

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摘要

High-frequency/high-speed integrated circuits become increasingly important because of the strong demand for higher data rate and lower power consumption, and they rely more on silicon-based technologies, which has the advantages of low cost, fast technological development and system-on-a-chip (SoC) capabilities. However, silicon technologies also present great challenges in high-frequency/high-speed integrated circuits. This work demonstrated that distributed circuit and injection locking are two enabling circuit techniques that can help overcome silicon limitations.; Distributed voltage-controlled oscillators (DVCO's) demonstrated the high-frequency capabilities of distributed circuits. The operation of distributed oscillators is analyzed and the general oscillation condition is derived, resulting in analytical expressions for the oscillation frequency and amplitude. Two tuning techniques are developed, namely, the inherent-varactor tuning and delay-balanced current-steering tuning. A complete analysis of the tuning techniques is also presented. CMOS and bipolar DVCO prototypes have been designed and fabricated in a commercial 0.35μm BiCMOS process. A 10-GHz CMOS DVCO achieves a tuning range of 12% and a phase noise of −103 dBc/Hz at 600 kHz frequency offset. A 12-GHz bipolar DVCO achieves a tuning range of 26% and a phase noise of −99 dBc/Hz at 600 kHz frequency offset. New DVCO architectures are also proposed to improve the performance.; The distributed circuit technique is also used for equalization in high-speed fiber-optic systems, in which inter-symbol interference (ISI) caused by fibre dispersion imposes a major limitation. Compared to optical-domain methods and other electrical-domain methods, equalization with distributed transversal filters (DTF's) presents the most cost-effective and SoC-compatible solution. Prototype DTF's have been implemented in a commercial 0.18μm SiGe BiCMOS process for 10 Gpbs fiber-optic systems. A 7-tap DTF reduces the ISI of a 10 Gbps signal after 800m 50μm multi-mode fiber from 5 dB to 1.38 dB, and improves the BER from 10−5 to 10−12.; The injection locking technique is applied in high-speed, low-power frequency dividers, namely, injection-locked frequency dividers (ILFD's). Based on the detailed analysis, shunt-peaking and oscillation-suppression techniques are developed to enhance the locking range. Prototypes are implemented in a commercial 0.35μm BiCMOS process using only CMOS transistors. A 19 GHz ILFD achieves a locking range of 1350 MHz with the power consumption of 1 mW. A 9 GHz ILFD achieves a locking range of 1490 MHz with the power consumption of 1.3 mW. Self-dividing oscillators are proposed to generate accurate low-phase-noise quadrature signals.
机译:高频/高速集成电路由于对更高数据速率和更低功耗的强烈需求而变得越来越重要,并且它们更多地依赖于基于硅的技术,该技术具有成本低,技术发展迅速和系统性能低的优点。片上(SoC)功能。然而,硅技术在高频/高速集成电路中也提出了巨大的挑战。这项工作表明,分布式电路和注入锁定是两种有助于克服硅限制的电路技术。分布式压控振荡器(DVCO's)展示了分布式电路的高频能力。分析了分布式振荡器的工作原理,并推导了一般的振荡条件,得出了振荡频率和幅度的解析表达式。开发了两种调谐技术,即固有变容二极管调谐和时延平衡电流控制调谐。还介绍了调谐技术的完整分析。 CMOS和双极性DVCO原型已通过0.35μm的BiCMOS工业化工艺进行设计和制造。 10 GHz CMOS DVCO在600 kHz频率偏移下可实现12%的调谐范围和-103 dBc / Hz的相位噪声。 12 GHz双极性DVCO在600 kHz频率偏移时可实现26%的调谐范围和-99 dBc / Hz的相位噪声。还提出了新的DVCO架构来提高性能。分布式电路技术还用于高速光纤系统中的均衡,在该系统中,由光纤色散引起的符号间干扰(ISI)构成了主要限制。与光域方法和其他电域方法相比,采用分布式横向滤波器(DTF)的均衡提供了最具成本效益且与SoC兼容的解决方案。 DTF原型已在用于10 Gpbs光纤系统的商用0.18μm m SiGe BiCMOS工艺中实现。 7抽头DTF可将800m50μ m 多模光纤后的10 Gbps信号的ISI从5 dB降低到1.38 dB,并将BER从10 -5 改善到10 −12 。注入锁定技术应用于高速,低功率分频器,即注入锁定分频器(ILFD)。在详细分析的基础上,开发了并联峰值和振荡抑制技术以扩大锁定范围。原型仅使用CMOS晶体管以商业化的0.35μm m BiCMOS工艺实现。 19 GHz ILFD的锁定范围为1350 MHz,功耗为1 mW。 9 GHz ILFD的锁定范围达到1490 MHz,功耗为1.3 mW。提出了自分频振荡器以产生精确的低相位噪声正交信号。

著录项

  • 作者

    Wu, Hui.;

  • 作者单位

    California Institute of Technology.;

  • 授予单位 California Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 127 p.
  • 总页数 127
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

  • 入库时间 2022-08-17 11:45:39

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