首页> 外文会议>IEEE International Solid- State Circuits Conference >2.3 A 220GOPS 96-Core Processor with 6 Chiplets 3D-Stacked on an Active Interposer Offering 0.6ns/mm Latency, 3Tb/s/mm2 Inter-Chiplet Interconnects and 156mW/mm2@ 82-Peak-Efficiency DC-DC Converters
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2.3 A 220GOPS 96-Core Processor with 6 Chiplets 3D-Stacked on an Active Interposer Offering 0.6ns/mm Latency, 3Tb/s/mm2 Inter-Chiplet Interconnects and 156mW/mm2@ 82-Peak-Efficiency DC-DC Converters

机译:2.3一个220GOPS 96核处理器,其中6个小芯片3D堆叠在有源插入器上,提供0.6ns / mm的延迟,3Tb / s / mm 2 小芯片间互连和156mW / mm 2 < / sup> @ 82%峰值效率的DC-DC转换器

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In the context of high-performance computing and big-data applications, the quest for performance requires modular, scalable, energy-efficient, low-cost manycore systems. Partitioning the system into multiple chiplets 3D-stacked onto large-scale interposers - organic substrate [1], 2.5D passive interposer [2] or silicon bridge [3] -leads to large modular architectures and cost reductions in advanced technologies by the Known Good Die (KGD) strategy and yield management. However, these approaches lack flexible efficient long-distance communications, smooth integration of heterogeneous chiplets, and easy integration of less-scalable analog functions, such as power management [4] and system IOs. To tackle these issues, this paper presents an active interposer integrating: i) a Switched Capacitor Voltage Regulator (SCVR) for on-chip power management; ii) flexible system interconnect topologies between all chiplets for scalable cache coherency support; iii) energy-efficient 3D-plugs for dense inter-layer communication; iv) a memory-IO controller and PHY for socket communication. The chip (Fig. 2.3.7) integrates 96 cores in 6 chiplets in 28nm FDSOI CMOS, 30-stacked in a face-to-face configuration using 20µm-pitch micro-bumps (µ-bumps) onto a 200 mm2 active interposer with 40µm-pitch Through Silicon Via (TSV) middle in a 65nm technology node. Even though complex functions are integrated, active-interposer yield is high thanks to the mature 65nm node and a reduced complexity (0.08transistors/µm2), with 30% of interposer area devoted to a SCVR variability-tolerant capacitors scheme.
机译:在高性能计算和大数据应用程序的背景下,对性能的追求需要模块化,可扩展,高能效,低成本的多核系统。将系统分成多个小芯片,然后3D堆叠在大型插入物上-有机基板[1],2.5D无源插入物[2]或硅桥[3]-导致大型模块化架构,并通过已知技术降低先进技术的成本模具(KGD)策略和良率管理。但是,这些方法缺乏灵活高效的长距离通信,异构小芯片的平滑集成以及难以扩展的模拟功能(如电源管理[4]和系统IO)的轻松集成。为了解决这些问题,本文提出了一种集成式有源插入器:i)用于片上电源管理的开关电容器电压调节器(SCVR); ii)所有小芯片之间的灵活系统互连拓扑,以支持可扩展的缓存一致性。 iii)高效的3D插头,用于密集的层间通信; iv)内存-IO控制器和PHY,用于套接字通信。该芯片(图2.3.7)在6个小芯片中集成了28个nm 28nm FDSOI CMOS中的96个内核,并使用20μm间距的微型凸点(μ凸点)以面对面配置堆叠30层到200 mm 2 有源中介层,在65nm技术节点中的中间间距为40µm的硅通孔(TSV)。即使集成了复杂的功能,由于成熟的65nm节点和降低的复杂度(0.08晶体管/ µm),有源插入器的良率也很高 2 ),其中30%的插入器面积专用于SCVR容差电容器方案。

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