Z2-FET used as 1-transistor high-speed DRAM

摘要

We have recently demonstrated a new device named Z2-FET (zero subthreshold swing and zero impact ionization) and proposed it as a 1-transistor DRAM. The device is built on an FD-SOI substrate and operates by feedback between carrier flows and injection barriers. We now present additional results obtained from extensive experiments and simulations. Experimentally, the ION/IOFF ratio exceeds 109 and supply voltage (VDD) scales down to 1.1 V with the DRAM retention time as high as 0.15 s at 75 oC. In simulation, the access time reaches below 1 ns and the Z2-FET can be scaled down to 30 nm. We also discuss various operation modes.