Tin nanowire field effect transistor

摘要

Semimetal tin nanowires of sufficiently small diameters become semiconductors. Bandgap engineering based on this effect allows for the design of a confinement modulated gap field-effect transistor in which the need for doping in the source, channel or drain is eliminated. Functionality of a dopant-free, single-material field effect transistor is demonstrated through ab initio simulations. Drain-source current-voltage characteristic of the confinement modulated gap transistor shows that the subthreshold slope and the on/off ratio are 73 mV/dec and up to 104 at VDD=400 mV, respectively.