Si ICL based Si{sub}3N{sub}4 passivation on InAlAs surface of InP-HEMT by RPECVD System

摘要

As a promising device for high speed communication, HEMT has got many intention. But, it is long way to field-application of HEMT because of instability of the device. Especially, surface of InP-HEMT (InAIAs) is very unstable and bandgap of InP is narrower than conventional GaAs-HEMT, so kink effect is very severe consequently. Si ICL (Inter Control Layer) based SiN passivation for GaAs-HEMT has been suggested before, and I applied it to the InP-HEMT passivation process. It showed that Si ICL based passivation was more effective for reducing surface state.