Terahertz absorption in InAs/GaSb type-II superlattcies

摘要

We theoretically demonstrate that it is possible to realize terahertz (THz) fundamental band-gap in InAs/GaSb type-II superlattices (SLs). The presence of such THz band-gap can result in a strong cut-off of optical absorption at THz bandwidth for relatively high-temperatures. This study is pertinent to the application of InAs/GaSb type-II SLs as optoelectronic devices such as THz photodetectors.