AlGaN/GaN HEMTs for THz Plasma Wave Detection and Emission

摘要

We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. This kind FinFET modification (EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas (2DEG) conduction channel. We present experimental data of sub- THz detection by EdgeFETs. We describe also how it is beneficial for observation of resonant plasma wave THz detection and emission.