Symmetric blocking power semiconductor switches require two edge terminations, one for the reverse blocking junction and the other one for the forward blocking junction. In this work, we demonstrated 1100V SiC symmetric blocking edge terminations using orthogonal positive bevel (OPB) termination and a one-zone Junction Termination Extension (JTE). The OPB was formed by orthogonally sawing 45° V-shape trenches into the SiC wafer with a diamond-coated dicing blade. The surface damage was then repaired with dry-etch in SF6/O2 plasma, which reduced the leakage current by around two orders of magnitude. As limited by field reach-through, both the OPB and the JTE terminations show breakdown voltage of 1100V. The P+P−N+ diodes fabricated on the same wafer with the OPB termination showed 1610V avalanche breakdown which was around 83% of ideal value.
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机译：对称阻塞功率半导体开关需要两个边缘终端，一个用于反向阻挡结，另一个用于前进阻挡结。在这项工作中，我们展示了使用正交正斜面（OPB）终端和单区域结终端延伸（JTE）的1100V SiC对称阻塞边缘终端。通过将45°V形沟槽正交地锯切晶片，用金刚石涂覆的切割刀片形成OPB。然后在SF6 / O2等离子体中用干蚀刻修复表面损伤，这将泄漏电流减少约两个级别。由于现场达到的限制，OPB和JTE终端都显示了1100V的击穿电压。在与OPB终端相同的晶片上制造的P - n + n + 二极管，其具有opb终端显示1610V雪崩击穿，其占理想值的83％约为83％ 。
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