New concept high-voltage IGBT gate driver with self-adjusting active gate control function for SiC-SBD hybrid module

摘要

We present a new concept in insulated-gate bipolar transistor (IGBT) gate drivers with a blocking voltage up to 3.3kV that have a pulse transformer interface and a function for self-adjusting active gate control. The error-correcting decoder we proposed contributed to the reliability of signal transmission. Moreover, the method of gate control using differentiation of gate voltage could automatically adjust the timing of gate controls against variations in the threshold voltage or collector current without the use of external sensors. These functions were integrated into custom ICs. The new concept high-voltage IGBT gate drivers applied to a 3.3 kV/1200A silicon carbide Schottky barrier diode (SiC-SBD) hybrid-module suppressed ringing in the SiC-SBD and reduced the slew rate by 70%.