Influence of the Intrinsic Length on the Behavior of PIN Diodes Fabricated on SOI Substrates Working as Solar Cells

摘要

This work evaluates the influence of the intrinsic region length on the behavior of PIN diodes fabricated in the substrate of SOI wafers, operating as solar cells. The analysis has been performed in terms of efficiency and fill factor, fundamental parameters for the solar cell characterization. The studied cell has shown efficiency of about 7% to 8% and fill factor with average about 80%. Originally, ungated PIN devices have been considered in TCAD simulations. In the sequence, a gate has been placed over the intrinsic region of simulated devices and different biases (0V and 5V) were applied to compare the results with the ungated ones. Lastly, different operation temperatures have been applied into simulations, aiming to achieve results closer to real operation conditions.