Method for fabricating a rear contact heterojunction intrinsic thin layer silicon solar cell with only two masking steps and respective solar cell

摘要

A silicon substrate (3) with a rear surface (5) is provided; a thin layer (7) of i-a-Si is deposited over the rear surface (5); a first semiconductor layer (13) comprising a doped semiconducting material of a first doping polarity is deposited through a first mask such that it covers first portions of a back surface (9) of the i-a-Si layer (7); a first separation layer (19) comprising an electrically insulating material is deposited through the first mask such that it covers at least an entire back surface (17) of the first semiconductor layer (13); a second semiconductor layer (21) comprising a doped semiconducting material of a second doping polarity is deposited though a second mask (27) at regions of second portions. In the finalized solar cell (1), the second semiconductor layer (21) is separated from the first semiconductor layer (13) by at least the intermediate first separation layer (19). Simple fabrication using only two shadow masking steps and high efficiency with high fill factors of the resulting HIT solar cell is achieved.