首页> 外文会议>International Workshop on Power and Timing Modeling, Optimization, and Simulation >Comparison of low-voltage scaling in synchronous and asynchronous FD-SOI circuits
【24h】

Comparison of low-voltage scaling in synchronous and asynchronous FD-SOI circuits

机译:低压缩放在同步和异步FD-SOI电路中的比较

获取原文

摘要

Today's battery powered devices motivate the scaling to reduced operation voltages on integrated systems. Low-voltage circuits are however more sensitive to process and temperature variations. This paper presents and compares the minimum voltages that allow reliable operations of synchronous and asynchronous case-study circuits in FD-SOI 28-nm technology. Results show that an asynchronous 8-bit arithmetic logic unit is able to operate under 0.4 V by performing equivalent data throughput and less power consumption than its synchronous counterpart.
机译:今天的电池供电设备激励缩放以减少集成系统上的操作电压。然而,低压电路对过程和温度变化更敏感。本文介绍并比较了FD-SOI 28-NM技术中同步和异步案例研究电路的可靠操作的最小电压。结果表明,异步8位算术逻辑单元能够通过执行与同步对应物的等效数据吞吐量和较少的功耗来操作0.4V下。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号