Enhanced field emission with self-alingned carbon nanotube emitters grown by RAP process

摘要

We optimized the triode structure for field emission with carbon nanotube emitters grown with resist-assisted pattering process. Carbon nanotube emitters were grown on silicon substrate and patterned with grid mesh for structural optimization. The gate mesh was self-aligned with the carbon nanotube for lower leakage current, resulting higher electron emission current and transmission ratio. With the optimized triode structure, we fabricated field emission lamp and obtain luminance of 23,000 cd/m2.