The case of an in-plane gated CNT emitter integrated in a planar diode configuration was investigated. An electrostatic model was proposed, which resulted in an analytical expression of the field at the apex of the CNT. Simulations validated this model and confirmed that the electrostatic influence of the bias electrode only depends on its radius and CNT height. The proximity of the gate as compared to the emitter apex enables low bias voltage to modulate the current with high susceptibility.
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