Recently ZnO has attracted some interest because it is considered a promising green light-emitting phosphor for low-voltage luminescence in flat panel displays such as vacuum fluorescent tube (VFDs) and field emission displays (FEDs). The green emission has been associated with the lattice defects such as interstitial zinc ions [1] or oxygen vacancies [2, 3]. Blue light-emitting cathode phosphor has been increasingly requested to develop blue cathode phosphors with high-efficiency and low-cost. In nanometer-sized semiconductors, the band gap increases with decreasing particle size, and therefore the emission wavelength of semiconductor often becomes shorter owing to the nanometer-sized quantum effect. However, the nanometer-sized powders are not good for handling in manufacturing process. The blue emission luminescence can be expected in hexagonal Mg-doped ZnO because the band gap energy increases under partial substitution of insulating MgO (ca. 8eV) for ZnO. It is important in photo-luminescent application to prepare chemical homogeneous and fine powders of Mg-doped ZnO. In the present work, the chemical preparation for partially Al-substituted MgO-ZnO (s.s.) powders and the effect of partially substituted Al on the photoluminescence (PL) were investigated.
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