首页> 外文会议>International Conference on Indium Phosphide and Related Materials >A band-to-band Coulomb interaction model for refractive indices of Al{sub}xGa{sub}(1-x)As and InGaAs ternary materials at photon energies near and above the band-gap
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A band-to-band Coulomb interaction model for refractive indices of Al{sub}xGa{sub}(1-x)As and InGaAs ternary materials at photon energies near and above the band-gap

机译:Al {Sub XGA {Sub}(1-x)折射率的带对频带库相互作用模型,以及在带间隙附近的光子能量的光子能量和Ingaas三元材料

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摘要

Refractive indices of ternary materials at photon energies somewhat above the bandgap have been modeled from Kramers-Kronig transform through an absorption model with Coulomb interaction and a double-Lorentzian broadening in employing Vegard's law.
机译:光子能量在带隙高于带隙上方的三元材料的折射率从Kramers-Kronig变换通过吸收模型和聘用vegard的定律进行了双洛伦兹拓展。

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