20 gbit/s modulation of 1.55 /spl mu/m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy

摘要

We describe the realization of 1.55 /spl mu/m InGaAs/InAlGaAs MQW ridge waveguide laser diodes with InP cladding layers grown by molecular beam epitaxy with solid sources (SSMBE) and valved cracker cells for phosphorus and arsenic. For lasers with 10 QWs, a threshold current density per quantum well of 150 Acm/sup -2/ was extrapolated for infinitely long cavities. 4/spl times/200 /spl mu/m/sup 2/ devices exhibit a T/sub 0/-value of 85 K in the temperature range from 20 to 85/spl deg/C and showed a maximum 3 dB modulation bandwidth of 16.5 GHz, capable of 20 Gbit/s NRZ large signal modulation with an extinction ratio of 6 dB. These results compare well with MQW lasers grown by MOCVD.