Study of Raman intensity of LO phonon modes in InGaAsP quaternary alloys grown on InP

摘要

The Raman intensities of optical phonon modes in In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/ quaternary alloys lattice matched to InP are studied in the region of the immiscibility. The peak intensity as well as the integral intensity of each phonon modes are investigated in terms of the relative density of corresponding bonds. It was found that the integral intensity is well interpreted with the bond density. But the replacement of a gallium atom with an indium gives remarkable variation in the peak intensity.