Effects of an InGaP electron barrier layer on 1.55 /spl mu/m laser diode performance

摘要

Temperature sensitive loss mechanisms are known to severely limit the performance of InGaAsP/InP laser diodes emitting at 1.55 /spl mu/m. In this paper, we report on a simple modification of the classical InGaAsP laser structure to reduce electron leakage from the separate confinement heterostructure (SCH) layer.