Liquid-Phase Electroepitaxy of GaN at atmospheric pressure using ammonia and Ga-Ge solution

摘要

Liquid-Phase Electroepitaxy of c-plane GaN was tried to perform using NH3 and a mixed solution of Ga and Ge. Consequently, GaN layer was successfully grown at the atmospheric pressure. The thickness of the grown layer was found to monotonously increase with the current. The thickness of the layer grown with the current of 4 A was more than twice of that of the conventional LPE. The growth thickness shows almost no change by the change of the thickness of the solution. This result strongly suggests the growth was driven mainly by the electromigration, which was caused by the current flow through the solution.