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Measuring the wafer temperature in HVM process tools using a new approach with automated wireless HighTemp-400 and EtchTemp-SE wafer systems

机译:使用具有自动无线Hightemp-400和Ichtemp-SE晶片系统的新方法测量HVM工具中的晶片温度

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As the technology nodes become smaller it is becoming more important to control all aspects of influencing parameters for the deposition of thin films using CVD tools and for plasma etch tools. This is especially important in a high volume manufacturing (HVM) environment with new tool installations and the need to achieve production ramp timelines. Controlling tool parameters including chamber wafer temperature is critical for fast ramp to production. Production ramp up cycle time is very important. Chamber matching in process tools is becoming a critical path item for production ramp. Monitoring chamber temperature is one of the process control parameters for thin films, plasma etch, diffusion, and clean process tools. The current method of measuring wafer temperature is manual and time consuming. Table 1 shows the Manual versus Automation method comparison. KLA-Tencor's new Factory Automation System (Fig. 1) helps simplify and automate chamber temperature data collection, supporting chamber matching activities for high volume fab ramps. This automation system utilizes a host manufacturing execution system (MES) to send Process Job/Control Job commands to SensArray FOUPs and delivers wafers via overhead hoist transfer (OHT) to process tools to collect temperature data. Upon return of the Automation FOUP and wafer, temperature data are automatically uploaded to the MES system.
机译:当技术节点变得越小时,控制使用CVD工具和等离子体蚀刻工具控制沉积薄膜的参数的所有方面变得越来越重要。这在具有新工具装置的大容量制造(HVM)环境中尤为重要,需要实现生产斜坡时间表。控制工具参数包括腔室晶片温度对于快速坡道至关重要。生产斜坡上升循环时间非常重要。流程工具中的腔室匹配正在成为生产坡道的关键路径项目。监测室温度是薄膜,等离子体蚀刻,扩散和清洁工艺工具的过程控制参数之一。测量晶片温度的当前方法是手动和耗时的。表1显示了手册与自动化方法比较。 KLA-Tencor的新工厂自动化系统(图1)有助于简化和自动化室温数据收集,支持高卷Fab坡道的腔室匹配活动。该自动化系统利用主机制造执行系统(MES)来将进程作业/控制作业命令发送到ScenArray FOUP,并通过架空升降机传输(OHT)传递晶片,以处理用于收集温度数据的工具。在返回自动化FOUP和晶圆后,温度数据将自动上传到MES系统。

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