A broad-band silicon microseismometer with 0.25 NG/rtHz performance

摘要

We report a micromachined silicon seismometer with a sensitivity of 0.25 ng/rtHz from 0.1 to 10 Hz. This represents the highest performance of a MEMS inertial sensor to date, and in particular is at or below the noise floor of the Earth's lowest ambient seismic levels over this bandwidth with a performance comparable to conventional seismometers. The microseismometer is robust to high shock (> 1000 g) and vibration (> 30 g rms), and can operate from +60C to -80 C allowing deployment under harsh conditions.