Impact of the Emitter Dead Layer Uniformity on c-Si Solar Cell Performance

摘要

IN THIS WORK, WE INVESTIGATED INFLUENCE OF THE EMITTER DEADLAYER UNIFORMITY ON PERFORMANCE OF THE INDUSTRIAL LARGESCALESOLAR CELL. WE FIRST INTRODUCED A SIMPLE METHOD TODETERMINE THE UNIFORMITY OF THE DEAD LAYER IN THE EMITTERREGION. THE FOUR-POINT PROBE, ELECTR°CHEMICAL CAPACITANCEVOLTAGE (ECV), AND QUANTUM EFFICIENCY MEASUREMENT (QE) HAVEBEEN USED, RESPECTIVELY, TO CHARACTERIZE THE SHEET RESISTANCE,DOPING PROFILE OF THE UNDERLYING PHOSPHORUS EMITTER ANDELECTRICAL PROPERTIES OF SOLAR CELL. OUR RESULTS SHOW THATEVEN IF THE UNIFORMITY OF THE AMOUNT OF ACTIVE PHOSPHORUSATOMS IN THE EMITTER REGION CAN BE WELL CONTROLLED, THERESTILL EXISTS UNIFORMITY ISSUE OF THE DEAD LAYER. COMPARED TOCENTRAL AREA OF THE SOLAR CELL, OUTER AREA HAS HIGHERAMOUNTS OF ELECTRICALLY INACTIVE PHOSPHORUS ATOM WHICHWOULD RESULT IN LOWER CHARGE CARRIER COLLECTION IN THE BLUERESPONSE REGION OF THE SOLAR CELL.