Analysis of the Emitter Dead Layer Uniformity on c-Si Solar Cell Performance

摘要

In this work, we investigated influence of the emitter dead layer uniformity on performance of theindustrial large-scale solar cell. We first introduced a simple method to determine the uniformity of the dead layer inthe emitter region. The four-point probe, Electr°Chemical Capacitance Voltage (ECV), and Quantum Efficiencymeasurement (QE) have been used, respectively, to characterize the sheet resistance, doping profile of the underlyingphosphorus emitter and electrical properties of solar cell. Our results show that even if the uniformity of the amountof active phosphorus atoms in the emitter region can be well controlled, there still exists uniformity issue of the deadlayer. Compared to central area of the solar cell, outer area has higher amounts of electrically inactive phosphorusatom which would result in lower charge carrier collection in the blue response region of the solar cell.