首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >A comparative study of heat-light soaking effect on CIGS thin film solar cells with zinc compound buffer layers deposited by ALD and CBD processes
【24h】

A comparative study of heat-light soaking effect on CIGS thin film solar cells with zinc compound buffer layers deposited by ALD and CBD processes

机译:ALD和CBD工艺沉积锌复合缓冲层对CIGS薄膜太阳能电池的热光浸泡效果比较研究

获取原文
获取外文期刊封面目录资料

摘要

The effects of a heat-light-soaking (HLS) on the cell performance were investigated for Cu(In,Ga)Se2(CIGS) thin-film solar cells with CBD-ZnS(O,OH) and ALD-Zn(O,S) buffer layers. The CBD-ZnS(O,OH)/CIGS andALD-ZnS(O,S)/CIGS solar cells respectively showed a drastic increase and a slight increase in all basic cell parametersafter the HLS post-treatment under AM1.5, 100mW/cm2 illumination at 130 °C. X-ray photoelectron spectroscopyshowed the decreased S/(S+O) atomic ratio of the CBD-ZnS(O,OH) buffer layer, implying re-arrangement of theconduction-band offset at the CBD-ZnS(O,OH)/CIGS interface. On the other hand, the change in S/(S+O) atomic ratio ofALD-Zn(O,S) buffer layer was not observed. By optimizing the HLS and the deposition conditions for each layers, CBDZnS(O,OH)/CIGS and ALD-Zn(O,S)/CIGS solar cells yielded total efficiencies of 18.8 and 18.7%, respectively.
机译:研究了Cu(In,Ga)Se2的热浸(HLS)对电池性能的影响 (CIGS)薄膜太阳能电池,带有CBD-ZnS(O,OH)和ALD-Zn(O,S)缓冲层。 CBD-ZnS(O,OH)/ CIGS和 ALD-ZnS(O,S)/ CIGS太阳能电池分别显示所有基本电池参数的急剧增加和轻微增加 在AM1.5下进行HLS后处理后,在130°C的光照下100mW / cm2。 X射线光电子能谱 结果表明CBD-ZnS(O,OH)缓冲层的S /(S + O)原子比降低,这暗示了CBD-ZnS(O,OH)缓冲层的重新排列 CBD-ZnS(O,OH)/ CIGS界面处的导带偏移。另一方面,S /(S + O)原子比的变化 没有观察到ALD-Zn(O,S)缓冲层。通过优化HLS和每一层的沉积条件,CBDZnS( O,OH)/ CIGS和ALD-Zn(O,S)/ CIGS太阳能电池的总效率分别为18.8和18.7%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号