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Characterization of intrinsic hysteresis of pentacene-based organic thin-film transistor through in-situ electrical measurement

机译:通过原位电测量表征并五苯有机薄膜晶体管的固有迟滞

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The intrinsic hysteresis behavior of a pentacene-based organic thin-film transistor (OTFT) was characterized through home-designed in-situ electrical measurement. The device can measure an intrinsic hysteresis after the device's fabrication under vacuum. In addition, the same hysteresis and electrical properties were observed when venting a nitrogen gas. Compared with the measurement condition of vacuum or nitrogen gas, exposure to the ambient air resulted in a severe hysteresis. This is because both the acceptor-like traps at the organic/dielectric interface and donor-like traps in the transport channel contributed to the effect of hysteresis in the OTFT. When the chamber was vacuumed out again, a significantly reduced hysteresis was obtained; almost the same as measured the first time. These results indicate that extrinsic hysteresis from oxygen and water is reversible.
机译:并五苯有机薄膜晶体管(OTFT)的固有磁滞行为通过家庭设计的原位电测量来表征。在真空下制造器件后,该器件可以测量固有磁滞。另外,排出氮气时观察到相同的磁滞和电性能。与真空或氮气的测量条件相比,暴露于环境空气中会导致严重的滞后现象。这是因为有机/介电界面处的受体样阱和传输通道中的供体样阱都对OTFT中的磁滞效应有贡献。当再次将腔室抽真空时,获得了明显降低的磁滞。几乎与第一次测量的相同。这些结果表明,氧和水的外在滞后是可逆的。

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