Control of drain induced barrier lowering in short channel poly-Si TFTs for AMOLED displays

摘要

In this work, we investigate the impact of drain induced barrier lowering on threshold voltage variation in short channel polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified TFT structure with short channel are designed to enhance the pixel performance for active-matrix organic light-emitting diode (AMOLED) displays. Numerical analysis combining 2-D device simulation and statistical pixel modeling shows that proposed p-type TFT structures can realize less threshold voltage deviation with high immunity of short channel effect, which is suitable for the current-driven device such as organic light-emitting diode (OLED).