Sources Of 1/F Noise In Si Delta-Doped Schottky Diodes

摘要

The model of Schottky diode with δ-doping is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance R_b of base and contacts, and the possible leakage I_(leak) are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔN_s - model) and model of 1/f noise in leakage current are suggested. The analysis of the 1/f noise spectrum allows assuming that, in investigated diodes, on 10~6 atoms of main impurity there are 1-10 atoms of extraneous impurity the ionization energy of which may stochastically be modulated.