Sources of 1/f noise in Si delta-doped Schottky diodes

摘要

The model of Schottky diode with δ-doping is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Ileak are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs - model) and model of 1/f noise in leakage current are suggested. The analysis of the 1/f noise spectrum allows assuming that, in investigated diodes, on 10⁶ atoms of main impurity there are 1–10 atoms of extraneous impurity the ionization energy of which may stochastically be modulated.