Noise Behavior of InP-Based Double-Gate and Standard HEMTs: a Comparison

摘要

A comparison of the dynamic and noise behavior between InAlAs/InGaAs Double-Gate (DG) and standard High Electron Mobility Transistors (HEMTs) is performed by means of Monte Carlo simulations. The DG-HEMT exhibits a considerably improved extrinsic behavior (especially f_(max)) over the corresponding standard HEMT, mainly due to the lower gate resistance. Concerning noise, even if the intrinsic P, R and C parameters show a modest improvement in the DG-HEMT, the extrinsic minimum noise figure F_(min) reveals a significantly better extrinsic noise performance.