Three-dimensional photoresist exposure and development simulation

摘要

Among all technologies photolithography holds the leading position in pattern transfer in today's semiconductor industry. The reduction of the lithographic feature sizes towards or even beyond the used wavelength and the increasing nonplanarity of devices create complicated problems for the lithography process. A three-dimensional photolithography simulator including mask illumination, resist exposure and resist development is a cost effective tool for further improvements. We present a complete three-dimensional simulation model focusing on the resist exposure and resist development step.