Modeling CVD effects in Atomic Layer Deposition on the Feature Scale

摘要

Simulation of atomic layer deposition requires the coupling of complex surface chemistry to ballistic transport in geometrical structures. The calculation furthermore has to be transient with chemical process models which have transients on different time scales. The paper shows a solution of this problem with a Monte Carlo based model implemented in the general purpose feature scale simulator TOPSI 3D. The chosen example is HfO_2 deposition with HfCl_4 / H_2O in a trench which may show a nonconformal film profile.