Investigation of the Detailed Structure of Atomically Sharp Ge/SiO{sub}2 Interfaces

摘要

The atomic structure of the interface between Ge and SiO{sub}2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO{sub}2 interface with probably small fractions of Ge in the oxide.