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A Combined Spin Coating and Lift-Off Process (CSLOP) to Realize Thick Silver Microstructures with a High Aspect Ratio for IoT Applications

机译:组合的旋转涂层和剥离过程(CSLOP),实现具有高纵横比的厚银色微观结构,适用于IOT应用

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This paper presents a new manufacturing technology, i.e., combined spin coating and lift-off process (CSLOP), for the fabrication of Ag interconnects and microstructures such as interconnect lines, interdigitated capacitors and spiral inductors with a high aspect ratio of thickness vs. width. For the interconnect fabrication using the thin film CSLOP, Ag lines with a width range from 10 to $100 mu mathrm{m}$ can be realized with an electrical resistivity of $sim 2.36 muOmegacdot ext{cm}$, only 1.48 times higher than that of bulk silver ($1.59 muOmegacdot ext{cm}$), which is the lowest resistive Ag line ever reported. For high performance on-chip flexible passive fabrication using the thick film CSLOP, the interdigitated capacitors with an electrode thickness of $70 mu mathrm{m}$ can exhibit a capacitance of 0.502pF@10 kHz and the 5-turn, $70 mu mathrm{m}$ thick spiral inductor can have high $Q$ performance with a highest inductance density up to 9.7 nH/mm2. Because the process scheme can be applied using other metal/metal oxide nanoparticles, the CSLOP can facilitate the realization of highly sensitive sensors and excellent heterogeneous integration for IOT applications.
机译:本文提出了一种新的制造技术,即组合的旋转涂层和剥离过程(CSLOP),用于制造Ag互连和微结构,例如互连线,交叉的电容器和具有高纵横比宽度的螺旋电感器的螺旋电感器。 。对于使用薄膜CSLOP的互连制造,宽度范围为10至 $ 100 mu mathrm { m} $ 可以用电阻率实现 $ sim 2.36 mu omega cdot text {cm} $ ,比散装银的3.48倍( $ 1.59 mu omega CDOT text {cm} $ ),这是有史以来最低的电阻AG线。对于使用厚膜CSLOP的高性能片上柔性无源制造,电极厚度的互连电容器 $ 70 mu mathrm { m} $ 可以表现出0.502pf@10 kHz的电容和5圈, $ 70 mu mathrm { m} $ 厚厚的螺旋电感器可以很高 $ q $ 具有最高电感密度的性能高达9.7 NH / mm 2 。因为可以使用其他金属/金属氧化物纳米粒子施加工艺方案,所以CSLOP可以促进实现高敏感的传感器和IOT应用的优异的异构整合。

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