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Fabrication of Suspended Multilevel Three-Dimensional Silicon Micro- and Nano-Structures

机译:悬浮多级三维硅微硅和纳米结构的制造

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A process for fabricating arbitrary-shaped three-dimensional silicon has been developed, based on high-energy ion irradiation, such as 200 keV to 2 MeV protons and helium followed by electrochemical anodization. This has enabled us to produce suspended complex microstructures such as arrays or long wires, grids, springs, vertically stacked wires and wires which can be controllably bent upwards and downwards in the vertical plane. By using a combination of multiple energy proton irradiation, and gray scale masks, different ion penetration depths and multilevel suspended three-dimensional silicon structures can be obtained in a single etch step.
机译:基于高能离子照射,如200keV至2 meV质子和氦,均开发了制造任意形状的三维硅的方法,然后进行电化学阳极氧化。这使我们能够产生悬浮的复杂微结构,例如阵列或长线,栅格,弹簧,垂直堆叠的电线和线,其可以在垂直平面上向上和向下可控地弯曲。通过使用多能量质子辐射的组合和灰度掩模,可以在单个蚀刻步骤中获得不同的离子渗透深度和多级悬浮的三维硅结构。

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