Ion-induced charge-collection transients in p-channel AlGaSb/InGaSb field-effect transistors

摘要

The first ion-induced, time-resolved charge-collection measurements for p-channel AlGaSb/InGaSb field-effect transistors are reported. The transient response reveals two distinct decay regions; a fast initial decay (< 1 ns) followed by a slower decay (> 10 ns). The slow decay is associated with charge enhancement processes, which are explained by electron trapping and de-trapping via deep-level traps located in the AlGaSb barrier material. Charge enhancement effects are reported for different drain and gate bias conditions, and it is found that charge-enhancement effects are suppressed when the gate bias is increased toward depletion. The effects of the bias on the transient response are presented and discussed.