Strained p-channel InGaSb/AlGaSb modulation-doped field-effect transistors

摘要

Strained In/sub 0.25/Ga/sub 0.75/Sb p-channel modulation-doped field-effect transistors with Al/sub 0.75/Ga/sub 0.25/Sb Be-doped barrier layers are demonstrated. The extrinsic normalised transconductances for 1.2 mu m gate length devices range from 33 to 51 mS/mm at 300 K and from 132 to 161 mS/mm at 77 K. At 300 K, the devices operated in depletion mode with a threshold voltage of approximately 0.3 V, a normalised output conductance of less than 3mS/mm, and maximum drain current densities of approximately 20mA/mm. The devices show promise for complementary heterojunction field-effect transistor logic applications.