A datasheet driven power MOSFET model and parameter extraction procedure for 1200V, 20A SiC MOSFETs

摘要

A compact model for SiC Power MOSFETs has been presented. The model has been validated with measurements from commercially available 1200V, 20A SiC power MOSFETs. The model features temperature scaling from 25°C to 225°C, which is the operating temperature for the new devices. In order to improve the user's experience with the model, a new datasheet driven parameter extraction strategy has been proposed. The parameter extraction strategy requires only the data normally given in device datasheets, so off-the-shelf devices can characterized quickly. The model includes charge conserving expressions for all non-linear capacitances of the power MOSFET. The SiC power MOSFET shows excellent performance over elevated temperatures, with small variation in on-state resistance over temperature.