机译:SiC功率MOSFET行为模型的模型参数标定方法
Xian Univ Technol Dept Elect Engn Xian Peoples R China;
Xian Univ Technol Dept Elect Engn Xian Peoples R China|Xian Univ Technol Key Lab Complex Syst Control & Intelligent Inform Xian Peoples R China;
silicon compounds; power MOSFET; calibration; wide band gap semiconductors; semiconductor device models; model parameter calibration method; SiC power MOSFETs behavioural model; switching characteristics; silicon carbide metal-oxide-semiconductor field effect transistor; behavioural model parameter; sensitivity influence order; corresponding model parameters; Saber simulation software; double pulse tests; SiC;
机译:使用紧凑建模和物理仿真深入分析SiC MOSFET的静态性能及其相关参数
机译:快速切换下SIC电源MOSFET三种间电容模型的精度
机译:建模雪崩诱导4H-SIC功率MOSFET的降解
机译:SiC功率MOSFET的模型参数优化方法
机译:开发基于物理的4H-SiC高压功率开关模型-MOSFET,IGBT和GTO。
机译:丙康唑多次脉冲暴露下γpulex存活的毒物动力学毒理动力学模型:模型假设校准数据要求和预测能力
机译:siC功率mOsFET的快速电热协同仿真建模方法
机译:mOsFETs动态特性的紧凑建模