Silicon carbide PiN physically-based model implemented in the Pspice circuit simulator

摘要

The main novelty in this paper is modeling with Pspice the real stored charge inside SiC PiN diodes depending on the working regime of the device (turn-on, on-state, and turn-off). The developed model is based on the adequate calculation of the ambipolar length (L) as a function of the charge injected to the N- region, which allows finding an analytical solution for the ambipolar diffusion equation (ADE). In special during the turn-off, the carrier concentration was modeled in three different regions. The physical-based model allows predicting dynamic and static behaviors of the SiC PiN diode.