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Silicon carbide semiconductor device integrating clamper circuit for clamping voltage
Silicon carbide semiconductor device integrating clamper circuit for clamping voltage
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机译:碳化硅半导体器件集成夹持电路的夹持电路
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摘要
The present invention provides a silicon carbide (SiC) semiconductor device integrating a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bidirectional voltage clamping circuit. An object of protecting a device is achieved by using the simple structure above, effectively preventing device damage that may be caused by a positive overvoltage and a negative overvoltage between a gate and a source.
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