Static and dynamic simulation of a Physically-Based Model of Silicon Carbide PiN Diode

Hernández Leobardo; Arzate Guillermo; Brito Zabdiel; Rodríguez Marco

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Static and dynamic simulation of a Physically-Based Model of Silicon Carbide PiN Diode

机译：基于物理模型的碳化硅PiN二极管的静态和动态仿真

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《Informacion Tecnologica》 |2010年第5期|共页
作者
Hernández Leobardo; Arzate Guillermo; Brito Zabdiel; Rodríguez Marco;
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中图分类自动化技术、计算机技术;
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1. Influence of operation conditions on true-static DC characteristics and on electro-thermal transient states in silicon carbide Merged PiN Schottky diodes [J] . Aneta Hapka, Wlodzimierz Janke Microelectronics journal . 2013,第11期

机译：工作条件对碳化硅合并的PiN肖特基二极管的真静态直流特性和电热瞬态的影响
2. Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator [J] . McNutt T.R., Hefner A.R. Jr., Mantooth H.A., IEEE Transactions on Power Electronics . 2004,第3期

机译：在Saber电路模拟器中实现的碳化硅PiN和合并的PiN肖特基功率二极管模型
3. Modeling the Impact of Silicon-Carbide Nanotube on the Phospholipid Bilayer Membrane: Study of Nanoindentation and Removal Processes via Molecular Dynamics Simulation [J] . Raczynski Przemyslaw, Gorny Krzysztof, Dendzik Zbigniew, The journal of physical chemistry, C. Nanomaterials and interfaces . 2019,第30期

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4. Silicon carbide PiN physically-based model implemented in the Pspice circuit simulator [C] . European Conference on Power Electronics and Applications . 2009

机译：基于碳化硅引脚的物理基础模型在PSPICE电路模拟器中实现
5. Development of basic design rules and the evaluation of novel design structures for high power silicon carbide diodes through device simulation. [D] . Tarplee, Marc Charles. 2001

机译：通过器件仿真开发基本设计规则并评估大功率碳化硅二极管的新颖设计结构。
6. Quantum decoherence dynamics of divacancy spins in silicon carbide [O] . Hosung Seo, Abram L. Falk, Paul V. Klimov, -1

机译：碳化硅中空位自旋的量子退相干动力学
7. Simulation in Amorphous Silicon and Amorphous Silicon Carbide Pin Diodes [O] . Gonçalves, Dora, Fernandes, Miguel, Louro, Paula, 2014

机译：非晶硅和非晶碳化硅Pin二极管的仿真

Static and dynamic simulation of a Physically-Based Model of Silicon Carbide PiN Diode

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