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High power silicon carbide (SiC) PiN diodes having low forward voltage drops
High power silicon carbide (SiC) PiN diodes having low forward voltage drops
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机译：正向压降低的高功率碳化硅（SiC）PiN二极管
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摘要
Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V.
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机译：提供了具有约3.0 kV至约10.0 kV的反向阻断电压（V R ）和更低的正向电压（V F ）的碳化硅（SiC）PiN二极管高于约4.3V。
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