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PECVD Silicon Carbide as a Chemically-Resistant Thin Film Packaging Technology for Microfabricated Antennas

机译:PECVD碳化硅作为微制造天线的耐化学薄膜包装技术

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This paper describes an effort to develop microfabricated planar antennas that utilize a plasma enhanced chemical vapor deposition (PECVD) based silicon carbide (SiC) thin film packaging technology to provide chemical resistance. The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on alumina substrates that utilize a self matching impedance technique. The PEVCD SiC thin film was deposited at 300°C at a chamber pressure of 900 mTorr and a power level of 100 W. The SiC film thickness was 450 nm. The antennas exhibit a return loss better than -15 dB at 5 and 7 GHz before and after SiC deposition. The gain of the antennas is 3 dB at 5 and 7 GHz before and after SiC deposition. The SiC-coated antennas were submerged into Au etchant for over a 24 hr period with no degradation in RF performance or physical integrity.
机译:本文介绍了开发利用基于等离子体增强的化学气相沉积(PECVD)的碳化硅(SiC)薄膜封装技术来开发微制造平面天线的努力提供耐化学性。 天线是共面波导馈送在氧化铝基板上制造的双频折叠槽天线,其利用自匹配阻抗技术。 PEVCD SiC薄膜在300℃下在900毫托的腔室压力下沉积,功率水平为100W。SiC膜厚度为450nm。 天线在SIC沉积之前和之后,在5和7 GHz下呈现优于-15dB的返回损耗。 在SIC沉积之前和之后,天线的增益为3 dB和7 GHz。 将SiC涂覆的天线浸没在Au蚀刻剂上以超过24小时的时间,没有降解RF性能或物理完整性。

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