首页> 外文会议>International Symposium on Solid Oxide Fuel Cells >Investigations on the Structural and Electronic Properties of Pure and Doped Bulk Pr_2NiO_4 through First Principles Calculations
【24h】

Investigations on the Structural and Electronic Properties of Pure and Doped Bulk Pr_2NiO_4 through First Principles Calculations

机译:通过第一性原理计算研究纯和掺杂的大块Pr_2NiO_4的结构和电子性质

获取原文

摘要

Pr_2NiO_4-based ceramic oxides are known promising MIEC cathodes material for SOFC, owing to its experimentally found good ionic and electronic conductivity compared with other known materials. In this study, the structural and electronic properties of pure and doped Pr_2NiO_4-based oxides are investigated through first principles calculations based on density functional theory (DFT) in an attempt to investigate the possibility of using this material as an SOFC electrolyte. Substitutional doping at the cation site [Pr_(2-y)R_yNi_(1-x-y-z)E_xT_zO_4 (R=La, and E=Cu and T=Ga)] shows change in both structural and electronic properties. Higher concentration of La doping increases the lattice parameter along the c direction while maintaining the electronic property of the host system. On the other hand, Cu doping causes tilting of the nickelate octahedral substructures so as to stabilize the whole structure but accompanies emergence of states which can contribute to electronic conduction. However, Ga doping has indications of high O ion diffusion and lower electronic conductivity.
机译:Pr_2NiO_4基陶瓷氧化物是已知有前途的SOFC MIEC阴极材料,因为与其他已知材料相比,它在实验上发现了良好的离子和电子导电性。在这项研究中,通过基于密度泛函理论(DFT)的第一原理计算,研究了纯的和掺杂的Pr_2NiO_4基氧化物的结构和电子性能,以试图研究将该材料用作SOFC电解质的可能性。阳离子部位的取代掺杂[Pr_(2-y)R_yNi_(1-x-y-z)E_xT_zO_4(R = La,E = Cu和T = Ga)]显示结构和电子性质的变化。较高浓度的La掺杂会沿c方向增加晶格参数,同时保持主机系统的电子特性。另一方面,Cu掺杂引起镍酸八面体亚结构的倾斜,从而使整个结构稳定,但是伴随着可有助于电子传导的状态的出现。然而,Ga掺杂具有高O离子扩散和较低电子电导率的迹象。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号