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Investigations on the Structural and Electronic Properties of Pure and Doped Bulk Pr_2NiO_4 through First Principles Calculations

机译:通过第一原理计算对纯粹和掺杂散装PR_2NIO_4的结构和电子性质的调查

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Pr_2NiO_4-based ceramic oxides are known promising MIEC cathodes material for SOFC, owing to its experimentally found good ionic and electronic conductivity compared with other known materials. In this study, the structural and electronic properties of pure and doped Pr_2NiO_4-based oxides are investigated through first principles calculations based on density functional theory (DFT) in an attempt to investigate the possibility of using this material as an SOFC electrolyte. Substitutional doping at the cation site [Pr_(2-y)R_yNi_(1-x-y-z)E_xT_zO_4 (R=La, and E=Cu and T=Ga)] shows change in both structural and electronic properties. Higher concentration of La doping increases the lattice parameter along the c direction while maintaining the electronic property of the host system. On the other hand, Cu doping causes tilting of the nickelate octahedral substructures so as to stabilize the whole structure but accompanies emergence of states which can contribute to electronic conduction. However, Ga doping has indications of high O ion diffusion and lower electronic conductivity.
机译:基于PR_2NIO_4的陶瓷氧化物是用于SOFC的有希望的MIEC阴极材料,由于其实验发现与其他已知材料相比的良好的离子和电子电导率。在该研究中,通过基于密度官能理论(DFT)的第一原理计算来研究纯和掺杂PR_2NIO_4氧化物的结构和电子性质,试图研究使用该材料作为SOFC电解质的可能性。在阳离子位点(2-y)r_yni_(1-x-y-z)e_xt_zo_4(r = la和e = cu和t = ga)上的替代掺杂示出了结构和电子特性的变化。较高浓度的LA掺杂在保持主机系统的电子特性的同时增加沿C方向的晶格参数。另一方面,Cu掺杂导致纤维酸琥珀色子结构倾斜,以稳定整个结构,但伴随能够有助于电子传导的状态的出现。然而,GA掺杂具有高O离子扩散和较低的电子电导率的指示。

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