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First Principles Study on the Electronic Structure and Properties of Sr- and Mg- Doped LaGaO_3

机译:第一个原则研究了SR-和MG-掺杂Lagao_3的电子结构和性质

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The structure and electronic properties of Sr- and Mg- doped LaGaO_3 was studied by employing first-principles calculations based on density functional theory (DFT) to elucidate the effect of doping and oxygen vacancy formation. The density of states analysis shows the system to be an insulator and becomes a wide gap semiconductor after the oxygen vacancy formation accompanied by emergence of a new state above the Fermi energy due to electron donation from the dopant.
机译:通过采用基于密度泛函理论(DFT)的第一原理计算来研究SR和Mg-掺杂Lagao_3的结构和电子性质,以阐明掺杂和氧空位形成的影响。状态分析的密度显示系统是绝缘体,并且在氧空位形成之后变得宽的间隙半导体,其由于来自掺杂剂的电子捐赠而上述Fermi能量之上的新状态。

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