A 4-Mb Non-volatile Chalcogenide Random Access Memory designed for space applications: Project status update

摘要

BAE Systems, under contract to the US Air Force Research Labs, has been developing a 4Mb Non-Volatile Chalcogenide Random Access Memory (C-RAM™) optimized for the radiation environments encountered in spacecraft applications. CRAM is a phase change memory with a unique combination of features that collectively provide a high-density, low-power, non-volatile memory solution that is radiation hardened and meets rigorous reliability requirements. The device is now undergoing QML qualification in preparation for being flight production ready in early 2009. Flight qualified C-RAM will serve the critical need for rad hard non-volatile RAM in strategic space and military applications.